集成巴黎人手机版网址芯片资料和参数

芯片型号:WNM07N60

参数指标

Product:WNM07N60

Configuration:N-Channel MOSFET

Channel:1

Drain-Source Voltage VDS(V)(Max.):600

Gate-Source Voltage VGS(V)(Max.):±30

Gate Threshold Voltage VGS(th)(V)(Max.):5

Drain-to-Source On-Resistance RDS(ON)@(VGS = 4.5V)(Ω)(Typ.):1

Drain-to-Source On-Resistance RDS(ON)@(VGS = 4.5V)(Ω)(Max.):1.2

Input Capacitance CISS(pF)(Typ.):930

Continuous Drain Current ID(@TA = 25℃)(A)(Max.):7

Power Dissipation PD(@TA = 25℃)(W)(Max.):156

Body Diode Forward Voltage VSD(V)(Typ.):0.74

Body Diode Forward Voltage VSD(V)(Max.):1.5

Package:TO-220

Size(mm)(LxW):22.05 x 10.15